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Transistor
2SD0968, 2SD0968A (2SD968, 2SD968A)
Silicon NPN epitaxial planer type
For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A)
Unit: mm
I Features
2.60.1
4.50.1 1.60.2
1.50.1
G G G
1.0-0.2
+0.1
High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C)
Ratings 100 120 100 120 5 1 0.5 1 150 -55 ~ +150 Unit V
0.4max.
45
0.40.08 0.50.08 1.50.1 3.00.15 3 2 1
4.0-0.20
0.40.04
I Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD0968 2SD0968A 2SD0968 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
marking
emitter voltage 2SD0968A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
V V A A W C C
1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package
Marking symbol : W(2SD0968) V(2SD0968A)
Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion
I Electrical Characteristics
Parameter Collector to emitter voltage 2SD0968 2SD0968A
(Ta=25C)
Symbol VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = 100A, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 5V, IC = 500mA*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 100 120 5 90 50 100 0.2 0.85 120 11
*2
typ
max
Unit V V
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
*1h FE1
220
0.6 1.2
MHz 20 pF
Rank classification
Rank hFE1 Q 90 ~ 155 2SD0968 2SD0968A WQ VQ R 130 ~ 220 WR VR
Pulse measurement
Marking Symbol
Note.) The Part numbers in the Parenthesis show conventional part number.
2.50.1
+0.25
V V
1
Transistor
PC -- Ta
1.4
2SD0968, 2SD0968A
IC -- VCE
IB=20mA
IC -- IB
1.2 Ta=25C 12mA 10mA 8mA 6mA 1.0 VCE=10V Ta=25C
Collector power dissipation PC (W)
1.2
Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion.
1.2
1.0
Collector current IC (A)
18mA 16mA 14mA
1.0
0.8
Collector current IC (A)
0.8
0.8
0.6
4mA
0.6
0.6
0.4 2mA 0.2
0.4
0.4
0.2
0.2
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 0 3 6 9 12 15
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 1 3 10 30 100 300 1000 25C -25C
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10 100 30 10 3 25C 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Ta=-25C 75C IC/IB=10 300
hFE -- IC
VCE=10V
Forward current transfer ratio hFE
250 Ta=75C 200 25C -25C
Ta=75C
150
100
50
0 1 3 10 30 100 300 1000
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
fT -- I E
200
Cob -- VCB
Collector output capacitance Cob (pF)
VCB=10V Ta=25C 50 IE=0 f=1MHz Ta=25C 40
Transition frequency fT (MHz)
160
120
30
80
20
40
10
0 -1
0 -3 -10 -30 -100 1 3 10 30 100
Emitter current IE (mA)
Collector to base voltage VCB (V)
2
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2001 MAR

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